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Artigo de periodico
ISFET fabrication and characterization for hydrogen peroxide sensing (2023)
Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Ramos, Daniel Augusto; Yojo, Leonardo Shimizu; Mori, Carlos Augusto Bergfeld; Sasaki, Katia Regina Akemi; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, SOLUÇÕES
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ABNT
DUARTE, Pedro Henrique et al. ISFET fabrication and characterization for hydrogen peroxide sensing. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.646. Acesso em: 24 maio 2024.
APA
Duarte, P. H., Rangel, R. C., Ramos, D. A., Yojo, L. S., Mori, C. A. B., Sasaki, K. R. A., et al. (2023). ISFET fabrication and characterization for hydrogen peroxide sensing. Journal of Integrated Circuits and Systems, 18( 1), 1-4. doi:10.29292/jics.v18i1.646
NLM
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. ISFET fabrication and characterization for hydrogen peroxide sensing [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-4.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v18i1.646
Vancouver
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. ISFET fabrication and characterization for hydrogen peroxide sensing [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-4.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v18i1.646
Artigo de periodico
Fractional-order MOS capacitor: experimental results and Monte Carlo analysis (2023)
Fernandes, Lucas Almir dos Santos; Alayo Chávez, Marco Isaías ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: FRACTAIS, SIMULAÇÃO, AVALIAÇÃO DE DESEMPENHO
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ABNT
FERNANDES, Lucas Almir dos Santos e ALAYO CHÁVEZ, Marco Isaías e MARTINO, João Antonio. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-5, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.660. Acesso em: 24 maio 2024.
APA
Fernandes, L. A. dos S., Alayo Chávez, M. I., & Martino, J. A. (2023). Fractional-order MOS capacitor: experimental results and Monte Carlo analysis. Journal of Integrated Circuits and Systems, 18( 1), 1-5. doi:10.29292/jics.v18i1.660
NLM
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-5.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v18i1.660
Vancouver
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-5.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v18i1.660
Artigo de periodico
Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
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ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.653. Acesso em: 24 maio 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, 18( 1), 1-6. doi:10.29292/jics.v18il.653
NLM
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Artigo de periodico
A physics-based RTD model accounting for space charge and phonon scattering effects (2022)
Celino, Daniel Ricardo; Souza, Adelcio Marques de; Plazas, Caio Luiz Machado Pereira; Ragi, Regiane; Romero, Murilo Araujo
Source: Journal of Integrated Circuits and Systems. Unidade: EESC
Subjects: POTENCIAL ELÉTRICO, DIODOS, ENGENHARIA ELÉTRICA
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ABNT
CELINO, Daniel Ricardo et al. A physics-based RTD model accounting for space charge and phonon scattering effects. Journal of Integrated Circuits and Systems, v. 17, n. 1, p. 1-8, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17il.545. Acesso em: 24 maio 2024.
APA
Celino, D. R., Souza, A. M. de, Plazas, C. L. M. P., Ragi, R., & Romero, M. A. (2022). A physics-based RTD model accounting for space charge and phonon scattering effects. Journal of Integrated Circuits and Systems, 17( 1), 1-8. doi:10.29292/jics.v17il.545
NLM
Celino DR, Souza AM de, Plazas CLMP, Ragi R, Romero MA. A physics-based RTD model accounting for space charge and phonon scattering effects [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 1): 1-8.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v17il.545
Vancouver
Celino DR, Souza AM de, Plazas CLMP, Ragi R, Romero MA. A physics-based RTD model accounting for space charge and phonon scattering effects [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 1): 1-8.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v17il.545
Artigo de periodico
Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C (2022)
Silva, Vanessa Cristina Pereira da; Leal, João Vitor da Costa; Perina, Welder F; Martino, João Antonio ; Simoen, Eddy ; Veloso, A; Agopian, Paula Ghedini Der
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, NANOTECNOLOGIA, BAIXA TEMPERATURA
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ABNT
SILVA, Vanessa Cristina Pereira da et al. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C. Journal of Integrated Circuits and Systems, v. 17, n. 1, p. 1-6, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17il.550. Acesso em: 24 maio 2024.
APA
Silva, V. C. P. da, Leal, J. V. da C., Perina, W. F., Martino, J. A., Simoen, E., Veloso, A., & Agopian, P. G. D. (2022). Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C. Journal of Integrated Circuits and Systems, 17( 1), 1-6. doi:10.29292/jics.v17i1.550
NLM
Silva VCP da, Leal JV da C, Perina WF, Martino JA, Simoen E, Veloso A, Agopian PGD. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C [Internet]. Journal of Integrated Circuits and Systems. 2022 ;17( 1): 1-6.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v17il.550
Vancouver
Silva VCP da, Leal JV da C, Perina WF, Martino JA, Simoen E, Veloso A, Agopian PGD. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C [Internet]. Journal of Integrated Circuits and Systems. 2022 ;17( 1): 1-6.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v17il.550
Artigo de periodico
Organic Dielectric Films for Flexible Transistors as Gas Sensors (2020)
García, Dennis Cabrera; Eirez Izquierdo, José Enrique ; Cavallari, Marco Roberto ; Quivy, Alain André; Fonseca, Fernando Josepetti
Source: Journal of Integrated Circuits and Systems. Unidades: IF, EP
Subjects: ÓPTICA ELETRÔNICA, TRANSISTORES, POLÍMEROS (MATERIAIS), FILMES FINOS, CAPACITORES, DIELÉTRICOS, SEMICONDUTORES
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ABNT
GARCÍA, Dennis Cabrera et al. Organic Dielectric Films for Flexible Transistors as Gas Sensors. Journal of Integrated Circuits and Systems, v. 15, n. 2, 2020Tradução . . Disponível em: https://doi.org/10.29292/jics.v15i2.170. Acesso em: 24 maio 2024.
APA
García, D. C., Eirez Izquierdo, J. E., Cavallari, M. R., Quivy, A. A., & Fonseca, F. J. (2020). Organic Dielectric Films for Flexible Transistors as Gas Sensors. Journal of Integrated Circuits and Systems, 15( 2). doi:10.29292/jics.v15i2.170
NLM
García DC, Eirez Izquierdo JE, Cavallari MR, Quivy AA, Fonseca FJ. Organic Dielectric Films for Flexible Transistors as Gas Sensors [Internet]. Journal of Integrated Circuits and Systems. 2020 ; 15( 2):[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v15i2.170
Vancouver
García DC, Eirez Izquierdo JE, Cavallari MR, Quivy AA, Fonseca FJ. Organic Dielectric Films for Flexible Transistors as Gas Sensors [Internet]. Journal of Integrated Circuits and Systems. 2020 ; 15( 2):[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v15i2.170
Artigo de periodico
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies (2017)
Itocazu, Vitor Tatsuo ; Sonnenberg, Victor ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
ITOCAZU, Vitor Tatsuo et al. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies. Journal of Integrated Circuits and Systems, v. 12, n. 2, p. 82-88, 2017Tradução . . Disponível em: https://doi.org/10.29292/jics.v12i2.455. Acesso em: 24 maio 2024.
APA
Itocazu, V. T., Sonnenberg, V., Martino, J. A., Simoen, E., & Claeys, C. (2017). Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies. Journal of Integrated Circuits and Systems, 12( 2), 82-88. doi:10.29292/jics.v12i2.455
NLM
Itocazu VT, Sonnenberg V, Martino JA, Simoen E, Claeys C. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies [Internet]. Journal of Integrated Circuits and Systems. 2017 ; 12( 2): 82-88.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v12i2.455
Vancouver
Itocazu VT, Sonnenberg V, Martino JA, Simoen E, Claeys C. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies [Internet]. Journal of Integrated Circuits and Systems. 2017 ; 12( 2): 82-88.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v12i2.455
Artigo de periodico
Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation (2016)
Itocazu, Vitor Tatsuo ; Martino, João Antonio ; Sasaki, Kátia Regina Akemi; Simoen, Eddy ; Claeys, Cor ; Sonnenberg, Victor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
ITOCAZU, Vitor Tatsuo et al. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation. Journal of Integrated Circuits and Systems, v. 12, n. 2, p. 101-106, 2016Tradução . . Disponível em: https://doi.org/10.29292/jics.v12i2.458. Acesso em: 24 maio 2024.
APA
Itocazu, V. T., Martino, J. A., Sasaki, K. R. A., Simoen, E., Claeys, C., & Sonnenberg, V. (2016). Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation. Journal of Integrated Circuits and Systems, 12( 2), 101-106. doi:10.29292/jics.v12i2.458
NLM
Itocazu VT, Martino JA, Sasaki KRA, Simoen E, Claeys C, Sonnenberg V. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation [Internet]. Journal of Integrated Circuits and Systems. 2016 ; 12( 2): 101-106.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v12i2.458
Vancouver
Itocazu VT, Martino JA, Sasaki KRA, Simoen E, Claeys C, Sonnenberg V. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation [Internet]. Journal of Integrated Circuits and Systems. 2016 ; 12( 2): 101-106.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v12i2.458
Artigo de periodico
Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex (2015)
Santos, Gerson; Cavallari, Marco Roberto ; Pereira, Luiz; Fonseca, Fernando Josepetti
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, DIODOS
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ABNT
SANTOS, Gerson et al. Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex. Journal of Integrated Circuits and Systems, v. 10, n. 1, p. 7-12, 2015Tradução . . Disponível em: https://www.sbmicro.org.br/jics/html/artigos/vol10no1/1.pdf. Acesso em: 24 maio 2024.
APA
Santos, G., Cavallari, M. R., Pereira, L., & Fonseca, F. J. (2015). Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex. Journal of Integrated Circuits and Systems, 10( 1), 7-12. Recuperado de https://www.sbmicro.org.br/jics/html/artigos/vol10no1/1.pdf
NLM
Santos G, Cavallari MR, Pereira L, Fonseca FJ. Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex [Internet]. Journal of Integrated Circuits and Systems. 2015 ; 10( 1): 7-12.[citado 2024 maio 24 ] Available from: https://www.sbmicro.org.br/jics/html/artigos/vol10no1/1.pdf
Vancouver
Santos G, Cavallari MR, Pereira L, Fonseca FJ. Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex [Internet]. Journal of Integrated Circuits and Systems. 2015 ; 10( 1): 7-12.[citado 2024 maio 24 ] Available from: https://www.sbmicro.org.br/jics/html/artigos/vol10no1/1.pdf
Artigo de periodico
Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs (2014)
Teixeira, Fernando Ferrari; Martino, João Antonio ; Bordallo, Caio Cesar Mendes ; Silveira, Marcilei Aparecida Guazzelli da; Agopian, Paula Ghedini Der ; Simoen, Eddy ; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: MICROELETRÔNICA, RAIOS X
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ABNT
TEIXEIRA, Fernando Ferrari et al. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 97-102, 2014Tradução . . Disponível em: https://doi.org/10.29292/jics.v9i2.394. Acesso em: 24 maio 2024.
APA
Teixeira, F. F., Martino, J. A., Bordallo, C. C. M., Silveira, M. A. G. da, Agopian, P. G. D., Simoen, E., & Claeys, C. (2014). Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, 9( 2), 97-102. doi:10.29292/jics.v9i2.394
NLM
Teixeira FF, Martino JA, Bordallo CCM, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 97-102.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v9i2.394
Vancouver
Teixeira FF, Martino JA, Bordallo CCM, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 97-102.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v9i2.394
Artigo de periodico
Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results (2014)
Nissimoff, Albert; Claeys, Cor ; Aoulaiche, Marc; Sasaki, Karen Lucia Mayumi; Simoen, Eddy ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NISSIMOFF, Albert et al. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 91-96, 2014Tradução . . Disponível em: https://doi.org/10.29292/jics.v9i2.393. Acesso em: 24 maio 2024.
APA
Nissimoff, A., Claeys, C., Aoulaiche, M., Sasaki, K. L. M., Simoen, E., & Martino, J. A. (2014). Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results. Journal of Integrated Circuits and Systems, 9( 2), 91-96. doi:10.29292/jics.v9i2.393
NLM
Nissimoff A, Claeys C, Aoulaiche M, Sasaki KLM, Simoen E, Martino JA. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 91-96.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v9i2.393
Vancouver
Nissimoff A, Claeys C, Aoulaiche M, Sasaki KLM, Simoen E, Martino JA. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 91-96.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v9i2.393
Artigo de periodico
Nanowire Tunnel Field Effect Transistors at High Temperature (2013)
Martino, Márcio Dalla Valle; Neves, Felipe Souza; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: NANOELETRÔNICA
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ABNT
MARTINO, Márcio Dalla Valle et al. Nanowire Tunnel Field Effect Transistors at High Temperature. Journal of Integrated Circuits and Systems, v. 8, n. 2, p. 110-115, 2013Tradução . . Disponível em: https://doi.org/10.29292/jics.v8i2.381. Acesso em: 24 maio 2024.
APA
Martino, M. D. V., Neves, F. S., Agopian, P. G. D., Martino, J. A., Rooyackers, R., & Claeys, C. (2013). Nanowire Tunnel Field Effect Transistors at High Temperature. Journal of Integrated Circuits and Systems, 8( 2), 110-115. doi:10.29292/jics.v8i2.381
NLM
Martino MDV, Neves FS, Agopian PGD, Martino JA, Rooyackers R, Claeys C. Nanowire Tunnel Field Effect Transistors at High Temperature [Internet]. Journal of Integrated Circuits and Systems. 2013 ;8( 2): 110-115.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v8i2.381
Vancouver
Martino MDV, Neves FS, Agopian PGD, Martino JA, Rooyackers R, Claeys C. Nanowire Tunnel Field Effect Transistors at High Temperature [Internet]. Journal of Integrated Circuits and Systems. 2013 ;8( 2): 110-115.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v8i2.381
Artigo de periodico
Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations (2010)
Cardoso, Juliana Lopes; Santos Filho, Sebastião Gomes dos
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: ELETROQUÍMICA, CIRCUITOS INTEGRADOS
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ABNT
CARDOSO, Juliana Lopes e SANTOS FILHO, Sebastião Gomes dos. Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 95-102, 2010Tradução . . Acesso em: 24 maio 2024.
APA
Cardoso, J. L., & Santos Filho, S. G. dos. (2010). Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations. Journal of Integrated Circuits and Systems, 5( 2), 95-102.
NLM
Cardoso JL, Santos Filho SG dos. Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 95-102.[citado 2024 maio 24 ]
Vancouver
Cardoso JL, Santos Filho SG dos. Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 95-102.[citado 2024 maio 24 ]
Artigo de periodico
PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors (2010)
Cavallari, Marco Roberto ; Albertin, Katia Franklin ; Santos, Gerson dos; Ramos, Carlos Alberto Santos; Pereyra, Inés ; Fonseca, Fernando Josepetti ; Andrade, Adnei Melges de
Source: Journal of Integrated Circuits and Systems. Unidades: EP, IEE
Subjects: TRANSISTORES, SEMICONDUTORES
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ABNT
CAVALLARI, Marco Roberto et al. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 116-124, 2010Tradução . . Acesso em: 24 maio 2024.
APA
Cavallari, M. R., Albertin, K. F., Santos, G. dos, Ramos, C. A. S., Pereyra, I., Fonseca, F. J., & Andrade, A. M. de. (2010). PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems, 5( 2), 116-124.
NLM
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 116-124.[citado 2024 maio 24 ]
Vancouver
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 116-124.[citado 2024 maio 24 ]
Artigo de periodico
Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs (2010)
Santos, Sara Dereste dos; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: TRANSISTORES
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ABNT
SANTOS, Sara Dereste dos et al. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 154-159, 2010Tradução . . Disponível em: https://doi.org/10.29292/jics.v5i2.322. Acesso em: 24 maio 2024.
APA
Santos, S. D. dos, Martino, J. A., Simoen, E., & Claeys, C. (2010). Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs. Journal of Integrated Circuits and Systems, 5( 2), 154-159. doi:10.29292/jics.v5i2.322
NLM
Santos SD dos, Martino JA, Simoen E, Claeys C. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 154-159.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v5i2.322
Vancouver
Santos SD dos, Martino JA, Simoen E, Claeys C. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 154-159.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v5i2.322
Artigo de periodico
Flow-injection analysis technique used to electrochemically measure nitrite through a gold working electrode modified with 1-2 diaminobenzene (DAB) (2010)
Almeida, F L; Santos Filho, Sebastião Gomes dos ; Fontes, M B A
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: ELETROQUÍMICA, ELETRODO, NITRATOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALMEIDA, F L e SANTOS FILHO, Sebastião Gomes dos e FONTES, M B A. Flow-injection analysis technique used to electrochemically measure nitrite through a gold working electrode modified with 1-2 diaminobenzene (DAB). Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 134-139, 2010Tradução . . Acesso em: 24 maio 2024.
APA
Almeida, F. L., Santos Filho, S. G. dos, & Fontes, M. B. A. (2010). Flow-injection analysis technique used to electrochemically measure nitrite through a gold working electrode modified with 1-2 diaminobenzene (DAB). Journal of Integrated Circuits and Systems, 5( 2), 134-139.
NLM
Almeida FL, Santos Filho SG dos, Fontes MBA. Flow-injection analysis technique used to electrochemically measure nitrite through a gold working electrode modified with 1-2 diaminobenzene (DAB). Journal of Integrated Circuits and Systems. 2010 ;5( 2): 134-139.[citado 2024 maio 24 ]
Vancouver
Almeida FL, Santos Filho SG dos, Fontes MBA. Flow-injection analysis technique used to electrochemically measure nitrite through a gold working electrode modified with 1-2 diaminobenzene (DAB). Journal of Integrated Circuits and Systems. 2010 ;5( 2): 134-139.[citado 2024 maio 24 ]
Artigo de periodico
Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs (2010)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor ; Rooyackers, Rita; Collaert, Nadine
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 168-173, 2010Tradução . . Disponível em: https://doi.org/10.29292/jics.v5i2.324. Acesso em: 24 maio 2024.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C., Rooyackers, R., & Collaert, N. (2010). Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, 5( 2), 168-173. doi:10.29292/jics.v5i2.324
NLM
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v5i2.324
Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2024 maio 24 ] Available from: https://doi.org/10.29292/jics.v5i2.324
Artigo de periodico
Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing (2007)
Ohta, Ricardo Luís; Viana, Carlos Eduardo; Morimoto, Nilton Itiro ; Borges, Ben-Hur Viana
Source: Journal of Integrated Circuits and Systems. Unidades: EP, EESC
Subjects: MICROELETRÔNICA, CIÊNCIA DA COMPUTAÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OHTA, Ricardo Luís et al. Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems, v. 2, n. 2, 2007Tradução . . Acesso em: 24 maio 2024.
APA
Ohta, R. L., Viana, C. E., Morimoto, N. I., & Borges, B. -H. V. (2007). Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems, 2( 2).
NLM
Ohta RL, Viana CE, Morimoto NI, Borges B-HV. Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems. 2007 ;2( 2):[citado 2024 maio 24 ]
Vancouver
Ohta RL, Viana CE, Morimoto NI, Borges B-HV. Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems. 2007 ;2( 2):[citado 2024 maio 24 ]
Artigo de periodico
Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric (2007)
Albertin, Katia Franklin ; Valle, M A; Pereyra, Inés
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: MICROELETRÔNICA, CIÊNCIA DA COMPUTAÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALBERTIN, Katia Franklin e VALLE, M A e PEREYRA, Inés. Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems, v. 2, n. 2, 2007Tradução . . Acesso em: 24 maio 2024.
APA
Albertin, K. F., Valle, M. A., & Pereyra, I. (2007). Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems, 2( 2).
NLM
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems. 2007 ;2( 2):[citado 2024 maio 24 ]
Vancouver
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems. 2007 ;2( 2):[citado 2024 maio 24 ]
Artigo de periodico
Plasma parameters obtained with planar probe and optical emission spectroscopy (2007)
Daltrini, Andre M; Moshkalev, Stanislav; Swart, Laura; Verdonck, Patrick Bernard
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: MICROELETRÔNICA, CIÊNCIA DA COMPUTAÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DALTRINI, Andre M et al. Plasma parameters obtained with planar probe and optical emission spectroscopy. Journal of Integrated Circuits and Systems, v. 2, n. 2, 2007Tradução . . Acesso em: 24 maio 2024.
APA
Daltrini, A. M., Moshkalev, S., Swart, L., & Verdonck, P. B. (2007). Plasma parameters obtained with planar probe and optical emission spectroscopy. Journal of Integrated Circuits and Systems, 2( 2).
NLM
Daltrini AM, Moshkalev S, Swart L, Verdonck PB. Plasma parameters obtained with planar probe and optical emission spectroscopy. Journal of Integrated Circuits and Systems. 2007 ; 2( 2):[citado 2024 maio 24 ]
Vancouver
Daltrini AM, Moshkalev S, Swart L, Verdonck PB. Plasma parameters obtained with planar probe and optical emission spectroscopy. Journal of Integrated Circuits and Systems. 2007 ; 2( 2):[citado 2024 maio 24 ]

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