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Relatorio tecnico
Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators (2020)
Fornari, Celso I; Abramof, Eduardo; Rappl, Paulo H O; Kycia, Stefan W; Morelhão, Sergio Luiz
Unidade: IF
Subjects: FILMES FINOS, BISMUTO
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ABNT
FORNARI, Celso I et al. Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/ftp/arxiv/papers/2008/2008.02180.pdf. Acesso em: 06 jun. 2024. , 2020
APA
Fornari, C. I., Abramof, E., Rappl, P. H. O., Kycia, S. W., & Morelhão, S. L. (2020). Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/ftp/arxiv/papers/2008/2008.02180.pdf
NLM
Fornari CI, Abramof E, Rappl PHO, Kycia SW, Morelhão SL. Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators [Internet]. 2020 ;[citado 2024 jun. 06 ] Available from: https://arxiv.org/ftp/arxiv/papers/2008/2008.02180.pdf
Vancouver
Fornari CI, Abramof E, Rappl PHO, Kycia SW, Morelhão SL. Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators [Internet]. 2020 ;[citado 2024 jun. 06 ] Available from: https://arxiv.org/ftp/arxiv/papers/2008/2008.02180.pdf
Artigo de periodico
Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films (2020)
Fornari, Celso I; Morelhão, Sergio Luiz
Source: Journal of Physical Chemistry C. Unidade: IF
Subjects: EURÓPIO, EPITAXIA POR FEIXE MOLECULAR, DIFRAÇÃO POR RAIOS X, MICROSCOPIA ELETRÔNICA DE VARREDURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FORNARI, Celso I e MORELHÃO, Sergio Luiz. Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films. Journal of Physical Chemistry C, v. 124, n. 29, p. 16048–16057, 2020Tradução . . Disponível em: https://doi.org/10.1021/acs.jpcc.0c05077. Acesso em: 06 jun. 2024.
APA
Fornari, C. I., & Morelhão, S. L. (2020). Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films. Journal of Physical Chemistry C, 124( 29), 16048–16057. doi:10.1021/acs.jpcc.0c05077
NLM
Fornari CI, Morelhão SL. Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films [Internet]. Journal of Physical Chemistry C. 2020 ; 124( 29): 16048–16057.[citado 2024 jun. 06 ] Available from: https://doi.org/10.1021/acs.jpcc.0c05077
Vancouver
Fornari CI, Morelhão SL. Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films [Internet]. Journal of Physical Chemistry C. 2020 ; 124( 29): 16048–16057.[citado 2024 jun. 06 ] Available from: https://doi.org/10.1021/acs.jpcc.0c05077
Artigo de periodico
Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis (2017)
Morelhao, Sergio Luiz; Fornari, Celso I; Rappl, Paulo Henrique de Oliveira; Abramof, Eduardo
Source: Journal of Applied Crystallography. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, MATERIAIS NANOESTRUTURADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MORELHAO, Sergio Luiz et al. Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis. Journal of Applied Crystallography, v. 50, n. 2, p. 399-410, 2017Tradução . . Disponível em: https://doi.org/10.1107/S1600576717000760. Acesso em: 06 jun. 2024.
APA
Morelhao, S. L., Fornari, C. I., Rappl, P. H. de O., & Abramof, E. (2017). Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis. Journal of Applied Crystallography, 50( 2), 399-410. doi:10.1107/S1600576717000760
NLM
Morelhao SL, Fornari CI, Rappl PH de O, Abramof E. Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis [Internet]. Journal of Applied Crystallography. 2017 ; 50( 2): 399-410.[citado 2024 jun. 06 ] Available from: https://doi.org/10.1107/S1600576717000760
Vancouver
Morelhao SL, Fornari CI, Rappl PH de O, Abramof E. Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis [Internet]. Journal of Applied Crystallography. 2017 ; 50( 2): 399-410.[citado 2024 jun. 06 ] Available from: https://doi.org/10.1107/S1600576717000760

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