Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: SEMICONDUTORES, ESPECTROSCOPIA RAMAN, DIFRAÇÃO POR RAIOS X
ABNT
SILVA, Marcionilio Teles de Oliveira et al. Raman scattering studies of the vibrational properties in non intentionally doped cubic 'Al IND.X' 'Ga IND.1-X' 'N' layers. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 05 jun. 2024.APA
Silva, M. T. de O., Fernandez, J. R. L., Pusep, Y. A., Chitta, V. A., Tabata, A., Noriega, O. C., et al. (2001). Raman scattering studies of the vibrational properties in non intentionally doped cubic 'Al IND.X' 'Ga IND.1-X' 'N' layers. In Resumos. São Paulo: SBF.NLM
Silva MT de O, Fernandez JRL, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Frey T, As DJ, Lischka K. Raman scattering studies of the vibrational properties in non intentionally doped cubic 'Al IND.X' 'Ga IND.1-X' 'N' layers. Resumos. 2001 ;[citado 2024 jun. 05 ]Vancouver
Silva MT de O, Fernandez JRL, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Frey T, As DJ, Lischka K. Raman scattering studies of the vibrational properties in non intentionally doped cubic 'Al IND.X' 'Ga IND.1-X' 'N' layers. Resumos. 2001 ;[citado 2024 jun. 05 ]