Source: Journal of Applied Crystallography. Unidade: IF
Subjects: SEMICONDUTORES, RAIOS X
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DOMAGALA, Jaroslaw Z. et al. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. Journal of Applied Crystallography, v. 49, n. ju 2016, p. 798-805, 2016Tradução . . Disponível em: https://doi.org/10.1107/S1600576716004441. Acesso em: 03 jun. 2024.APA
Domagala, J. Z., Sarzynski, M., Mazdziarz, M., Dluzewski, P., Leszczynski, M., & Morelhao, S. L. (2016). Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. Journal of Applied Crystallography, 49( ju 2016), 798-805. doi:10.1107/S1600576716004441NLM
Domagala JZ, Sarzynski M, Mazdziarz M, Dluzewski P, Leszczynski M, Morelhao SL. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. Journal of Applied Crystallography. 2016 ; 49( ju 2016): 798-805.[citado 2024 jun. 03 ] Available from: https://doi.org/10.1107/S1600576716004441Vancouver
Domagala JZ, Sarzynski M, Mazdziarz M, Dluzewski P, Leszczynski M, Morelhao SL. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. Journal of Applied Crystallography. 2016 ; 49( ju 2016): 798-805.[citado 2024 jun. 03 ] Available from: https://doi.org/10.1107/S1600576716004441
