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Filtros : "Clavero, I. Manglano" Limpar

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  • Artigo de periodico

    Incubation effect during laser micromachining of GaN films with femtosecond pulses (2019)

    Almeida, Gustavo Foresto Brito de; Nolasco, Lucas Konaka; Barbosa, Gustavo Rocha; Schneider, A.; Jaros, A.; Clavero, I. Manglano; Margenfeld, C.; Waag, A.; Voss, T.; Mendonça, Cleber Renato

    Source: Journal of Materials Science: materials in electronics. Unidade: IFSC

    Subjects: FOTÔNICA, LASER, PROCESSO SOL-GEL, CELULOSE

    PrivadoAcesso à fonteDOIHow to cite
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    • ABNT

      ALMEIDA, Gustavo Foresto Brito de et al. Incubation effect during laser micromachining of GaN films with femtosecond pulses. Journal of Materials Science: materials in electronics, v. 30, n. 18, p. 16821-16826, 2019Tradução . . Disponível em: https://doi.org/10.1007/s10854-019-01373-2. Acesso em: 02 jun. 2024.

    • APA

      Almeida, G. F. B. de, Nolasco, L. K., Barbosa, G. R., Schneider, A., Jaros, A., Clavero, I. M., et al. (2019). Incubation effect during laser micromachining of GaN films with femtosecond pulses. Journal of Materials Science: materials in electronics, 30( 18), 16821-16826. doi:10.1007/s10854-019-01373-2

    • NLM

      Almeida GFB de, Nolasco LK, Barbosa GR, Schneider A, Jaros A, Clavero IM, Margenfeld C, Waag A, Voss T, Mendonça CR. Incubation effect during laser micromachining of GaN films with femtosecond pulses [Internet]. Journal of Materials Science: materials in electronics. 2019 ; 30( 18): 16821-16826.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1007/s10854-019-01373-2

    • Vancouver

      Almeida GFB de, Nolasco LK, Barbosa GR, Schneider A, Jaros A, Clavero IM, Margenfeld C, Waag A, Voss T, Mendonça CR. Incubation effect during laser micromachining of GaN films with femtosecond pulses [Internet]. Journal of Materials Science: materials in electronics. 2019 ; 30( 18): 16821-16826.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1007/s10854-019-01373-2

  • Artigo de periodico

    Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption (2018)

    Martins, R. J.; Siqueira, J. P.; Clavero, I. Manglano; Margenfeld, C.; Fündling, S.; Vogt, A.; Waag, A.; Voss, T.; Mendonça, Cleber Renato

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS

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    • ABNT

      MARTINS, R. J. et al. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, v. 123, n. 24, p. 243101-1-243101-5, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027395. Acesso em: 02 jun. 2024.

    • APA

      Martins, R. J., Siqueira, J. P., Clavero, I. M., Margenfeld, C., Fündling, S., Vogt, A., et al. (2018). Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, 123( 24), 243101-1-243101-5. doi:10.1063/1.5027395

    • NLM

      Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1063/1.5027395

    • Vancouver

      Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1063/1.5027395
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