Alzeidan, Ahmad; Claro, M S; Quivy, Alain André 
Source: Journal of Applied Physics. Unidade: IF
Assunto: FOTODETECTORES
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ALZEIDAN, Ahmad e CLARO, M S e QUIVY, Alain André. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Journal of Applied Physics, v. 126, p. 224506(6), 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5125238. Acesso em: 23 maio 2024.APA
Alzeidan, A., Claro, M. S., & Quivy, A. A. (2019). High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Journal of Applied Physics, 126, 224506(6). doi:10.1063/1.5125238NLM
Alzeidan A, Claro MS, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction [Internet]. Journal of Applied Physics. 2019 ; 126 224506(6).[citado 2024 maio 23 ] Available from: https://doi.org/10.1063/1.5125238Vancouver
Alzeidan A, Claro MS, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction [Internet]. Journal of Applied Physics. 2019 ; 126 224506(6).[citado 2024 maio 23 ] Available from: https://doi.org/10.1063/1.5125238
