Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well (2019)
- Authors:
- Gusev, G M
- Raichev, O E - Rzhanov Institute of Semiconductor Physics
- Olshanetsky, E B - Rzhanov Institute of Semiconductor Physics
- Levin, A D
- Kvon, Z D - Rzhanov Institute of Semiconductor Physics
- Mikhailov, N N - Rzhanov Institute of Semiconductor Physics
- Dvoretsky, S A - Rzhanov Institute of Semiconductor Physics
- Gusev, G M
- USP affiliated authors: GUSEV, GENNADY - IF ; LEVINE, ALEXANDRE - IF
- Unidade: IF
- DOI: 10.1088/2053-1583/aaf702
- Subjects: TERMOELETRICIDADE; CONDUTIVIDADE ELÉTRICA; POÇOS QUÂNTICOS
- Keywords: QUANTUM WELL; AMBIPOLAR THERMOPOWER; TOPOLOGICAL INSULATOR
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: 2D Materials
- ISSN: 2053-1583
- Volume/Número/Paginação/Ano: v. 6, n. 014001, p. 1-21, 2019
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
-
ABNT
GUSEV, G M et al. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, v. 6, n. 014001, p. 1-21, 2019Tradução . . Disponível em: https://doi.org/10.1088/2053-1583/aaf702. Acesso em: 03 jun. 2024. -
APA
Gusev, G. M., Raichev, O. E., Olshanetsky, E. B., Levin, A. D., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, 6( 014001), 1-21. doi:10.1088/2053-1583/aaf702 -
NLM
Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 jun. 03 ] Available from: https://doi.org/10.1088/2053-1583/aaf702 -
Vancouver
Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 jun. 03 ] Available from: https://doi.org/10.1088/2053-1583/aaf702 - Quantum hall effect in n-p-n and n-2D topological insulator-n junctions
- Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells
- Thermoelectric phenomena in 2D e 3D topological insulators
- The resistance of 2D Topological insulator in the absence of the quantized transport
- Electronic thermal conductivity in 2D topological insulator in a HgTe quantum well
- Viscous magnetotransport and Gurzhi effect in bilayer electron system
- Electronic thermal conductivity in 2D topological insulator in a 'HG''TE' quantum well
- Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system
- Stokes flow around an obstacle in viscous two-dimensional electron liquid
- Manifestations of classical size effect and electronic viscosity in the magnetoresistance of narrow two-dimensional conductors: Theory and experiment
Informações sobre o DOI: 10.1088/2053-1583/aaf702 (Fonte: oaDOI API)
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