Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing (2004)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Subjects: FOTOLUMINESCÊNCIA; ESPECTROSCOPIA RAMAN; MICROSCOPIA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Vacuum Science and Technolohy B
- ISSN: 1071-1023
- Volume/Número/Paginação/Ano: v. 22, n. 4, p. 1669-1671, Jul./Aug. 2004
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ABNT
JACOBSOHN, L. G. e ZANATTA, Antonio Ricardo e NASTASI, M. Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B, v. 22, n. 4, p. 1669-1671, 2004Tradução . . Acesso em: 03 jun. 2024. -
APA
Jacobsohn, L. G., Zanatta, A. R., & Nastasi, M. (2004). Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B, 22( 4), 1669-1671. -
NLM
Jacobsohn LG, Zanatta AR, Nastasi M. Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B. 2004 ; 22( 4): 1669-1671.[citado 2024 jun. 03 ] -
Vancouver
Jacobsohn LG, Zanatta AR, Nastasi M. Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B. 2004 ; 22( 4): 1669-1671.[citado 2024 jun. 03 ] - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
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